NPFC - MIL-M-38510/249
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 13 February 1990 |
| Status: | inactive |
| Page Count: | 40 |
scope:
This specification covers the detail requirements for monolithic silicon, dynamic, CMOS, 1,048,576/1-bit random access memory microcircuits. Two product assurance classes (S and B), four electrical performance categories and five case styles are provided and are reflected in the complete part number.
The part or identifying number shall be in accordance with MIL-M-38510, and as specified herein.
The device types shall be as shown in the following:
Device Device Temperature Access/cycle Refresh type organization range (case) time interval 01 1,048,576/1-bit RAM −55°C to +125°C 80/160 ns 8 ms 02 1,048,576/1-bit RAM −55°C to +125°C 100/200 ns 8 ms 03 1,048,576/1-bit RAM −55°C to +125°C 120/230 ns 8 ms 04 1,048,576/1-bit RAM −55°C to +125°C 150/260 ns 8 ms
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) V D-6 (18-lead, .960" × .310" × .200"), dual-in-line package X See figure I (20-lead, .640" × .420" × .090"), flat package Y See figure I (20-lead, .685" × 338" × .125"), J-leaded chip carrier package Z See figure I (20-terminal, .685" × .358" × .092"), rectangular chip carrier package U See figure I (20-lead, .680" × .385" × .095"), flat package
Voltage on any pin relative to VSS - - - - - - - - - −0.5 V to +7.0 V Storage temperature range (ambient) - - - - - - - - −65°C to +150°C Power dissipation (minimum cycle time) - - - - - - - 1.0 W Lead temperature (soldering, 5 seconds)- - - - - - - +270°C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C Short circuit output current- - - - - - - - - - - - 50 mA Thermal resistance, junction-to-case (θJC): Case V - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
The soft error rate due to alpha particles shall not exceed 9.16 × 10−11 errors per bit-day at sea level as defined in 4.4.3 and method 1032 of MIL-STD-883 and under the following conditions:
a. VCC = 4.5 V dc.
b. TC = +25°C.
c. Data pattern = checkerboard.
d. Cycle time = 500 ns.
Supply voltage (VCC) - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Power supply and signal reference (VSS)- 0.0 V dc 2/ High-level input voltage (VIH): All inputs - - - - - - - - - - - - - - 2.4 V dc minimum to VCC + 1 V dc maximum Low-level input voltage (VIL): All inputs - - - - - - - - - - - - - - −0.5 V dc minimum to +0.8 V dc maximum Refresh cycle time (tRFSH) - - - - - - - 8.0 ms Case operating temperature range (TC)- - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.
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