NPFC - MIL-M-38510/249
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
inactive
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| Organization: | NPFC |
| Publication Date: | 3 October 1988 |
| Status: | inactive |
| Page Count: | 37 |
Document History
October 10, 2001
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
February 13, 1990
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, dynamic, CMOS, 1,048,576/1-bit random access memory microcircuits. Two product assurance classes (S and B), four electrical...
MIL-M-38510/249
October 3, 1988
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1,048,576/1-BIT DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.