DLA - SMD-5962-95610
MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC CELL ARRAY, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 12 March 1996 |
| Status: | inactive |
| Page Count: | 27 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
The PIN is be as shown in the following example:
Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function Toggle Speed 01 3142A -05 4200 gate programmable array 4.1 ns 02 3142A -04 4200 gate programmable array 3.3 ns
The device class designator is a single letter identifying the product assurance level as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level 8 microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535
The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style X CMGA15-84 84 1/ Pin grid array package Y See figure 1 100 Quad flat package Z See figure 1 100 Quad flat package U CMGA6-132 132 2/ Pin grid array package
The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
Supply voltage range to ground potential (VCC) - - - - - −0.5 V dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Voltage applied to three-state output(VTS) - - - - - - - −0.5 V dc to VCC +0.5 V dc Lead temperature (soldering, 10 seconds) - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case outline X, U - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Case outlines Y, Z - - - - - - - - - - - - - - - - - - 20°C/W 4/ Junction temperature (TJ) - - - - - - - - - - - - - - - - +150°C 5/ Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C
Case operating temperature Range(TC)- - - - - - - - - - - −55°C to +125°C Supply voltage relative to ground(VCC)- - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - - 0 V dc
Fault coverage measurement of manufacturing Logic tests (MIL-STD-883, test method 5012)- - - - - - 7/ percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits... View More
Document History