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DLA - SMD-5962-86841 REV C

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 January 1998
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

The complete PIN is as shown in the following example:

The device type(s) identify the circuit function as follows:

Device types Generic number Circuit function 01 54ALS11A Triple, 3-input positive AND gates

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDF2-F14 14 Flat package 2 CQCC1-N20 20 Square chip carrier

The lead finish is as specified in MIL-PRF-38535, appendix A.

Supply voltage range --------------------------------- −0.5 V dc minimum to 7.0 V dc maximum Input voltage range ---------------------------------- 1.5 Vdc at −18mA to 7.0 V dc Storage temperature range ---------------------------- −65°C to +150°C Maximum power dissipation (PD) 1/ -------------------- 16.5 mW Lead temperature (soldering, 10 seconds) ------------- +300°C Thermal resistance, junction-to-case (ΘJC) ----------- See MIL-STD-1835 Junction temperature (TJ) ---------------------------- +175°C

Supply voltage range(VCC) ---------------------------- +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) --------------- 2.0 V dc Maximum low level input voltage (VIL): TC=+125°C ---------------------------------------- 0.7 V dc TC=−55°C ----------------------------------------- 0.8 V dc TC=+25°C ----------------------------------------- 0.8 V dc Case operating temperature range (TC) ---------------- −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

March 1, 2021
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
April 5, 2016
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 18, 2006
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-86841 REV C
January 21, 1998
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN is as shown in the following...
October 5, 1992
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 18, 1988
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 13, 1987
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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