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NPFC - MIL-M-38510/305

MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 9 August 1983
Status: inactive
Page Count: 16
scope:

This specification covers the detail requirements for monolithic silicon, Schottky, TTL, low-power or gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The device$type shall be as follows:

Device type Circuit 01 Quadruple 2-input OR gate 02 Quadruple 2-input exclusive OR gate

The device class shall be the product assurance level as defined in MIL-M-3-8510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package. B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2 (20-terminal, .350. × .350 ), square chip carrier package.

Supply voltage range- - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - −1.5 V dc at −18 mA to +5.5 V dc Storage temperature range - - - - - - - - - −65°c to +150°C Maximum power dissipation (PD) 1/ - - - - - −55 mW dc Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC): Cases A, B, D - - - - - - - - - - - - - - 70°C/W Case C- - - - - - - - - - - - - - - - - - 50°C/W Case X - - - - - - - - - - - - - - - - - 60°C/W Junction temperature (TJ)- - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC)- - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH)- - +2.0 V dc Maximum low-level input voltage (VIL) - - +0.7 V dc Case operating temperature range(TC)- - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

September 15, 2022
Microcircuits, Digital, Bipolar Low-Power Schottky TTL, or Gates, Monolithic Silicon
A description is not available for this item.
November 16, 2012
Microcircuits, Digital, Bipolar Low-Power Schottky TTL, or Gates, Monolithic Silicon
A description is not available for this item.
February 8, 2008
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, OR gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes...
February 10, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, OR gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes...
June 28, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
November 30, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
November 19, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/305
August 9, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Schottky, TTL, low-power or gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes...
May 22, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
September 9, 1980
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
March 9, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
June 28, 1978
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
February 14, 1978
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
July 27, 1977
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
May 23, 1977
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
September 15, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.
January 30, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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