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DOD - SMD 5962-89590

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512 X 8 BIT SERIAL EEPROM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 31 May 1994
Status: inactive
Page Count: 18
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Endurance 01 24C04 512 × 8 serial EEPROM 10,000 cycles

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range . . . . . . . . . . . . . . . . . . −0.3 V dc to +6.50 V dc Temperature under bias . . . . . . . . . . . . . . . . . −65°C to +135°C Storage temperature range . . . . . . . . . . . . . . . −65°C to +150°C Voltage on any pin with respect to ground . . . . . . . . . . . . . . . . . . . . . . . −1.0 V to +6.5 V DC output current . . . . . . . . . . . . . . . . . . . . 5 mA Maximum power dissipation . . . . . . . . . . . . . . . . 100 mW Junction temperature (TJ) . . . . . . . . . . . . . . . . +175°C 2/ Thermal resistance, junction to case . . . . . . . . . . See MIL-STD-1835 Lead temperature (soldering, 10 seconds) . . . . . . . . +300°C Input voltage range . . . . . . . . . . . . . . . . . . . −0.3 V to +6.5 V Endurance (minimum) . . . . . . . . . . . . . . . . . . . 10,000 cycles Data retention (minimum) . . . . . . . . . . . . . . . . 10 years

Operating supply voltage . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Case operating temperature range (TC) . . . . . . . . . −55°C to +125°C. High level input voltage (VIH) . . . . . . . . . . . . . VCC × 0.7 to VCC + 0.5 V dc Low level input voltage (VIL) . . . . . . . . . . . . . −1.0 V dc to VCC × 0.3

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

August 17, 2017
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512 X 8 BIT SERIAL EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 30, 2010
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512 X 8 BIT SERIAL EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-89590
May 31, 1994
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512 X 8 BIT SERIAL EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices."...
September 27, 1990
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 512 X 8 BIT SERIAL EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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