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DLA - SMD-5962-88725 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 October 1989
Status: inactive
Page Count: 18
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 256K × 1 CMOS SRAM 36 ns 02 See 6.6 256K × 1 CMOS SRAM 45 ns 03 See 6.6 256K × 1 CMOS SRAM 55 ns 04 See 6.6 256K × 1 CMOS SRAM 70 ns 05 See 6.6 256K × 1 CMOS SRAM 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120"), rectangular chip carrier package

Voltage on any input relative to VSS - - - - - - - −0.5 V dc to +7.0 V dc Voltage applied to Q - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases L and X - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - - - - - - - - - - - - - - - 0 V Input high voltage range (VIH) - - - - - - - - - - 2.2 V dc to +6.0 V dc Input low voltage range (VIL) - - - - - - - - - - - −0.5 V dc to +0.8 V dc 2/ Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 1 SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
September 10, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 23, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 23, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88725 REV A
October 16, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
October 22, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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