NPFC - MIL-M-38510/246
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
inactive
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| Organization: | NPFC |
| Publication Date: | 24 July 1995 |
| Status: | inactive |
| Page Count: | 1 |
Document History
August 17, 2020
Microcircuits, Memory, Digital, NMOS, 246,144-Bit Dynamic Random Access Memory (DRAM), Monolithic Silicon
A description is not available for this item.
November 9, 2010
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
January 31, 2006
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
April 26, 2001
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/246
July 24, 1995
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
June 25, 1987
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
A description is not available for this item.
January 13, 1987
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 246,144-BIT, DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, NMOS, 262,144/1-bit, dynamic random access memory. Two product assurance classes, two electrical performance categories, two...