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DLA - SMD-5962-96734

MICROCIRCUIT, DIGITAL, MIL-STD-1750 INSTRUCTION SET ARCHITECTURE, MEMORY MANAGEMENT UNIT (MMU), MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 16 July 1997
Status: active
Page Count: 24
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device Generic number Circuit function 01 BX1752 Memory management unit (MMU)

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA17-P101 101 Pin grid array package Y See figure 1 100 Gullwing-lead chip carrier package

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VDD) ................................. −0.7 V dc to +7.0 V dc Input voltage range (VIN) .................................. −0.7 V dc to +7.0 V dc Storage temperature range .................................. −65°C to +150°C Maximum power dissipation (PD) ............................. 170 mW 2/ Lead temperature (soldering, 10 seconds) ................... +300°C Thermal resistance, junction-to-case (θJC); Case outline X ............................................. See MIL-STD-1835 Case outline Y ............................................. 10°C/W Junction temperature (TJ) .................................. +165°C

Supply voltage range (VDD) ................................. 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH); FCLK and STB inputs ....................................... 4.5 V dc RESETB ..................................................... 3.0 V dc All other inputs .......................................... 2.4 V dc Maximum low level input voltage (VIL); FCLK and STB inputs ....................................... 0.5 V dc All other inputs .......................................... 0.8 V dc Case operating temperature range (TC) ...................... −55°C to +125°C Operating frequency (FCLK max) ............................. 40 MHz

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ............... XX percent 3/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

SMD-5962-96734
July 16, 1997
MICROCIRCUIT, DIGITAL, MIL-STD-1750 INSTRUCTION SET ARCHITECTURE, MEMORY MANAGEMENT UNIT (MMU), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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