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NPFC - MIL-M-38510/650

MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC

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Organization: NPFC
Publication Date: 22 May 1987
Status: inactive
Page Count: 31
scope:

This specification covers the detail requirements for monolithic silicon, high speed, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Quad 2 - input NAND gate 02 Triple 3 - input NAND gate 03 Dual 4 - input NAND gate 04 8 - input NAND gate 05 Quad 2 - input NAND Schmitt trigger

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) C D-1 (14-lead, ¼" × ¾"), dual-in-line package 2 C-2 (20-terminal, .350" × .350") square chip carrier package D F-2 (14-lead, ¼" × ⅜"), flat pack, configuration one (1) only

Supply voltage (VCC)- - - - - - - - - - - - −0.5 V dc +7.0 V dc DC input voltage (VIN)- - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage (VOUT)- - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Clamp diode current (IIK, IOK)- - - - - - - ±20 mA DC output current per pin (IOUT)- - - - - - ±25 mA DC VCC or GND current per pin (ICC) - - - ±50 mA Storage temperature range (TSTG)- - - - - - −65°C to +150°C Maximum power dissipation (PD)- - - - - - - +300 mW Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC): D-1 - - - - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) C-2 - - - - - - - - - - - - - - - - - - - - 60°C/W Junction temperature (TJ) - - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Device types 01, 02, 03, 04:

Input low (VIL) maximum voltage - - - - 0.3 V at VCC = 2 V 0.9 V at VCC = 4.5 V 1.2 V at VCC = 6 V Input high (VIH) minimum voltage- - - - 1.5 V at VCC = 3 V 3.15 V at VCC = 4.5 V 4.2 V at VCC = 6 V

Device type 05:

Input low (VIL) maximum voltage - - - - 1.0 V at VCC = 2 V 2.2 V at VCC = 4.5 V 3.0 V at VCC = 6 V Input high (VIH) minimum voltage- - - - 0.7 V at VCC = 2 V 1.7 V at VCC = 4.5 V 2.1 V at VCC = 6 V

All devices:

Supply voltage (VCC) - - - - - - - - - - 2 V dc to 6 V dc Output voltage - - - - - - - - - - - - - 0 V dc to VCC Operating temperature (TA) - - - - - - - −55°C to +125°C

Input rise and fall times (tr, tf) maximum:

VCC = 2 V 1000 ns VCC = 4.5 V 500 ns VCC = 6 V 400 ns

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.

Document History

November 26, 2019
Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
A description is not available for this item.
February 13, 2015
Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
A description is not available for this item.
May 6, 2010
Microcircuits, Digital, High-Speed CMOS, Nand Gates, Monolithic Silicon, Positive Logic
This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
July 26, 2005
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
June 5, 2003
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
July 24, 2002
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
August 9, 1996
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
MIL-M-38510/650
May 22, 1987
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, high speed, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
August 23, 1985
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
March 15, 1985
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, NAND GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.

References

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