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NPFC - MIL-M-38510/153

MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 11 March 1985
Status: inactive
Page Count: 17
scope:

This specification covers the detail requirements for monolithic silicon, TTL, quadruple bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outline and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 Quadruple bus buffer gate (inverting control input) 02 Quadruple bus buffer gate (noninverting control input)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) C D-1 (14-lead, ¼" × ¾") dual-in-line package D F-2 (14-lead, ¼" × ⅜") flat package

Supply voltage range- - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - −1.5 V dc at −12 mA to 5.5 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/ Type 01 - - - - - - - - - - - - - - - - - 303 mW dc Type 02 - - - - - - - - - - - - - - - - - 347 mW dc Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, junction-to-case (θJC); Case C and D- - - - - - - - - - - - - - - (see MIL-M-38510, appendix C) Junction temperature (TJ) 2/- - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage(VCC) - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH)- - - - - 2.0 V dc maximum Maximum low-level input voltage (VIL) - - - - - 0.8 V maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logisitic support of existing equipment.

Document History

September 30, 2014
Microcircuits, Digital, TTL, Quadruple Bus Buffer Gates with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
December 16, 2009
Microcircuits, Digital, TTL, Quadruple Bus Buffer Gates with Three-State Outputs, Monolithic Silicon
This specification covers the requirements for monolithic silicon, TTL, quadruple bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outlines and lead...
February 22, 2005
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the requirements for monolithic silicon, TTL, quadruple bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outlines and lead...
June 21, 2002
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
September 6, 1996
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/153
March 11, 1985
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, TTL, quadruple bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outline and lead...
July 5, 1983
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
March 10, 1980
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 23, 1976
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
June 17, 1976
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
October 23, 1975
MICROCIRCUITS, DIGITAL, TTL, QUADRUPLE BUS BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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