DLA - SMD-5962-89684
MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH-CURRENT, DARLINGTON TRANSISTOR ARRAYS, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 27 December 1989 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 2821 Eight-gate Darlington transistor array
The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case Outline V D-6 (18-lead, .960" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package
Output voltage (VCE) - - - - - - - - - - - - - 95 V dc Continuous collector current (IC) - - - - - - - 500 mA maximum Continuous base current (IB) - - - - - - - - - 25 mA maximum Power dissipation (PD) 1/ - - - - - - - - - - 1.0 W Storage temperature range - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ) - - - - - - - - - - - +175°C Maximum package power dissipation, TA = +125°C - 330 mW Thermal resistance, junction-to-case (ΘJC) - - - See MIL-M-38510, appendix C Thermal resistance, junction-to-ambient (ΘJA): Case V - - - - - - - - - - - - - - - - - - - - 75°C/W Case 2 - - - - - - - - - - - - - - - - - - - - 130°C/W
Ambient operating temperature range (TA) - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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