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DLA - SMD-5962-94676 REV B

MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 January 1996
Status: inactive
Page Count: 17
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HFA1100 Ultra high speed current feedback amplifier 02 HS1100RH Radiation hardened, ultra high speed current feedback amplifier

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Voltage between +VS and −VS . . . . . . . . . . . . . . . . . . 12 V dc Differential input voltage . . . . . . . . . . . . . . . . . . 5 V dc Voltage at either input terminal . . . . . . . . . . . . . . . +VS and −VS Output current (50% duty cycle) . . . . . . . . . . . . . . . . ±55 mA Maximum package power dissipation (PD) (TA = +125°C) . . . . . 0.45 W 2/ Junction temperature (TJ) . . . . . . . . . . . .. . . . . . . +175°C Storage temperature range (TSTG) . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . 27°C/W Thermal resistance, junction-to-ambient (ΘJA) . . . . . . . . . 112°C/W

Operating supply voltage (±VS) . . . . . . . . . . . . . . . . ±5 V Load resistance (RL) . . . . . . . . . . . . . . . . . . . . . ≥ 50 Ω Ambient operating temperature range (TA) . . . . . . . . . . . −55°C to +125°C Radiation features (device type 02 only): Neutron . . . . . . . . . . . . . . . . . . . . . . . . . . 3/ Total dose . . . . . . . . . . . . . . . . . . . . . . . . . > 300 Krads 4/ Latch up . . . . . . . . . . . . . . . . . . . . . . . . . . None 5/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 23, 2011
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 15, 2005
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 7, 2004
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
A description is not available for this item.
July 17, 2000
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
July 9, 1999
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-94676 REV B
January 31, 1996
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
October 28, 1994
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
A description is not available for this item.
August 4, 1994
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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