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DLA - SMD-5962-87710 REV A

MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 11 December 1991
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 LM158 Low power, dual operational amplifier 02 LM158A Low power, dual operational amplifier

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline G A-1 (8-lead, .370" × .185"), can P D-4 (8-lead, .405" × .310" × .200"), dual-in-line package 2 C-2 (20-terminal, .358" × .358" × .100"), leadless chip carrier package

Supply voltage (V+) - - - - - - - - - - - - - - - - - 32 V or ±16 V Input voltage - - - - - - - - - - - - - - - - - - - - −0.3 V to +32 V Differential input voltage - - - - - - - - - - - - - - 32 V Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD): 1/ Cases G and P - - - - - - - - - - - - - - - - - - - 830 mW Case 2 - - - - - - - - - - - - - - - - - - - - - - - 1375 mW Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Case temperature for 60 seconds - - - - - - - - - - - +260°C Junction temperature (TJ) - - - - - - - - - - - - - - +175°C Thermal resistance, junction-to-case (ΘJC) - - - - - - See MIL-M-38510, appendix C

Ambient operating temperature range (TA) - - - - - - - −55°C to +125°C Operating supply voltage range (V+) - - - - - - - - - ±16 V

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 27, 2020
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
January 15, 2015
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
December 9, 2008
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 7, 2008
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 5, 2006
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 17, 2002
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
November 3, 2000
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 23, 1999
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 15, 1999
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 28, 1999
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 23, 1997
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-87710 REV A
December 11, 1991
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 1, 1987
MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
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