scope:

This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors or titanium-tungsten as the fusible link or programming element. Three product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 512 word/8 bits per word PROM with uncommitted collector 02 512 word/8 bits per word PROM with active pull-up and a choice third high-impedance state output 03 512 word/8 bits per word PROM with active pull-up and a third high-impedance state output 04 512 word/8 bits per word PROM with uncommitted collector 05 512 word/8 bits per word PROM with active pull-up and a third high-impedance state output

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1-¼"), dual-in-line package K F-6 (24-lead, ⅜" × ⅝"), flat package X See figure 1 (24-lead, ⅜ × ⅜"), flat package Y See figure 2 (20-lead, 5/16" × 1.0"), dual-in-line package Z C-3 (24 terminal, .400" × .400"), chip carrier package

Supply voltage range - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - - −1.5 V dc at −10 mA to +5.5 V dc Storage temperature range- - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - +300°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Thermal resistance, junction-to-case (θ_JC) 1/: Cases J, K, and Y- - - - - - - - - - - - - - 30°C/W Cases X and Z- - - - - - - - - - - - - - - - 36°C/W Output voltage - - - - - - - - - - - - - - - - −0.5 V dc to +V_CC Output sink current- - - - - - - - - - - - - - 100 mA Maximum power dissipation (P_D) 2/- - - - - - - 1.02 W Maximum junction temperature (T_J)- - - - - - - 175°C

Supply voltage - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage - - - - - 2.0 V dc Maximum low-level input voltage- - - - - - 0.8 V dc Normalized fanout (each output)- - - - - - 8 mA 3/ Case operating temperature range - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.