NPFC - MIL-M-38510/208
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
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| Organization: | NPFC |
| Publication Date: | 12 October 2010 |
| Status: | inactive |
| Page Count: | 54 |
scope:
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
intended Use:
Microcircuits conforming to this specification are intended for logistic support of existing equipment.
Document History
June 16, 2023
Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
August 21, 2013
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW),...
MIL-M-38510/208
October 12, 2010
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW),...
February 15, 2006
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome resistors or titanium-tungsten as the...
April 24, 2001
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
June 1, 1989
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
January 31, 1984
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors or titanium-tungsten as the fusible link or programming element....
August 16, 1982
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
November 23, 1981
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 31, 1980
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
October 2, 1979
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
April 9, 1979
MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.