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DLA - SMD-5962-77060 REV C

MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 December 1993
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 4072B Dual 4-input OR gate 02 4072B Dust 4-input OR gate

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VDD) (01) . . . . . . . . . . −0.5 V dc to +18 V dc Supply voltage range (VDD) (02). . . . . . . . . . . −0.5 V dc to +20 V dc (voltages referenced to VSS terminal) Input voltage range . . . . . . . . . . . . . . . . −0.5 V dc to VDD +0.5 V dc Storage temperature range . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation, PD (01) . . . . . . . . . 200 mW 1/ Maximum power dissipation, PD (02) . . . . . . . . . 500 mW 1/ Lead temperature (soldering, 10 seconds) . . . . . . +260°C Thermal resistance, junction-to-case (ΘJC) . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . +175°C

Supply voltage range (VDD) (01) . . . . . . . . . +3.0 V dc minimum to +15 V dc maximum Supply voltage range (VDD) (02). . . . . . . . . . +3.0 V dc minimum to +18 V dc maximum Minimum high level input voltage (VIH) . . . . . . +3.5 V dc at VDD = 5 V dc Maximum low level input voltage (VIL) . . . . . . +1.5 V dc at VDD = 5 V dc Case operating temperature range . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistic purposes.

Document History

September 24, 2018
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
August 24, 2011
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 14, 2005
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 17, 2001
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-77060 REV C
December 29, 1993
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 23, 1993
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.
November 18, 1992
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.
December 29, 1977
MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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