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DLA - SMD-5962-89790

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 December 1992
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 4K × 4 CMOS SRAM with separate I/O 20 ns (data retention) 02 4K × 4 CMOS SRAM with separate I/O 20ns 03 4K × 4 CMOS SRAM with separate I/O 15 ns (data retention) 04 4K × 4 CMOS SRAM with separate I/O 15 ns

The case outline(s) shall be as designated in MIL-STD-1835, and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat pack L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3 CQCC1-N28 28 Square leadless chip carrier

Terminal voltage range with respect to ground - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - 20 mA Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θC): Cases L, K, and 3 - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - +150°C 2/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) - - - - - - - - −0.5 V dc to +0.8 V dc 3/ Case operating temperature range (TC) - - - - - - - - −55° to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 13, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
A description is not available for this item.
July 13, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
November 4, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89790
December 21, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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