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NPFC - MIL-M-38510/55

MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 30 April 1984
Status: inactive
Page Count: 43
scope:

This specification covers the detail requirements for monolithic silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The complete part number shall be in accordance with MIL-M-38510.

The device type shall be as follows:

Device type Circuit 01 and 03 Inverting Hex Buffer 02 and 04 Noninverting Hex Buffer 05 Quad True/Complement Buffer 51 and 53 Inverting Hex Buffer 52 and 54 Noninverting Hex Buffer 55 Quad True/Complement Buffer

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline, (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼", flat-package) C D-1 (14-lead, ¼" × ¾", dual-in-line package) D F-2 (14-lead, ¼" × ⅜", flat-package) E D-2 (16-lead, ¼" × ⅞", dual-in-line package) F F-5 (16-lead, ¼" × ⅜", flat-package) X F-1 (14-lead, ¼" × ¼", flat-package) except dimension "A" = 0.1 (2.54 mm) maximum Y F-2 (14-lead, ¼" × ⅜", flat-package) except dimension "A" = 0.1 (2.54 mm) maximum Z F-5 (16-lead, ¼" × ⅜", flat-package) except dimension "A" = 0.1 (2.54 mm) maximum

NOTES

1. As an exception to 3.5.6.2,3 of MIL-M-38510, for case outlines X, Y and Z only, the leads of bottom brazed ceramic packages (i.e. configuration 2 of case outlines F-l, F-2, or F-5) may have electroless nickel undercoating which shall be 50 to 200 microinches (1.27 to 5.08 µm) thick provided the lead finish is hot solder dip (i.e. finish letter A) and provided that, after any lead forming, an additional hot solder dip coating is applied which shall extend from the outer tip of the lead to no more than 0.015 inch (0.38 mm) from the package edge.

2. For bottom or side brazed packages, case outlines X, Y and Z only, the S1 dimension may go to .000 inch (.00 mm) minimum. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: George C. Marshall Space Flight Center, National Aeronautics and Space Administration, ATTN. EG02 Marshall Space Flight Center, Alabama, 35812 by using the self-addressed Standardization Document Improvement (DD Form 1426) appearing at the end of this document or by letter.

Device types 01 and 02 Supply voltage range VDD - VSS): VCC ≤ VDD - - - - - - - - - - - - - - - - - −0.5 to +15.5 V Output load capacitance (each output) - - - 200 pF when VCC > 10 V Input voltage range - - - - - - - - - - - - (VSS − 0.5 V) ≤VI ≤(VDD +0.5 V) Device types 51 and 52 Supply voltage range (VDD - VSS): VCC ≤ VDD - - - - - - - - - - - - - - - - - −0.5 to +18.0 V Output load capacitance (each output) - - - 200 pF when VCC > 10 V Input voltage range - - - - - - - - - - - - (VSS − 0.5 V) ≤VI ≤(VDD +0.5 V) Device types 03, 04 and 05 Supply voltage range (VCC - VSS) - - - - - - −0.5 to +18.0 V Input voltage range - - - - - - - - - - - - - VSS − 0.5 V) ≤VI ≤(VDD + 0.5 V) Device types 53, 54 and 55 Supply voltage range (VCC - VSS) - - - - - - −0.5 to +18.0 V Input voltage range - - - - - - - - - - - - - (VSS − 0.5 V) ≤VI ≤(VDD +0.5 V) All device types Input current (each input) - - - - - - - - - ±10 mA Storage temperature range- - - - - - - - - - −65°C to 175°C Maximum power dissipation, PD- - - - - - - - 200 mW Lead temperature (soldering 10 seconds) - - 300°C Thermal resistance, junction to case - - - - (See MIL-M-38510, appendix C) Junction temperature - - - - - - - - - - - - TJ= 175°C

Device types 01, 02, 03, 04, and 05 Supply voltage (VCC or VDD - VSS) - - - - - - 4.5 to 12.5 V dc Input low (VIL) voltage range - - - - - - - - 0-0.85 V dc @ VCC or VDD = 5 V; 0-2.1 V dc @ VCC or VDD = 12.5 V Input high (VIH) voltage range 1/ - - - - - - 3.95-5.0 V dc @ VCC or VDD = 5 V; 10.0-12.5 V dc @ VCC or VDD = 12.5 V Device types 51, 52, 53, 54, and 55 Supply voltage (VCC or VDD - VSS) - - - - - - 4.5 to 15.0 V dc Input low (VIL) voltage range - - - - - - - - 0-1.5 V dc @ VCC or VDD = 5 V; 0-2.0 V dc @ VCC or VDD = 10 V; 0-4.0 V dc @ VCC or VDD = 15.0 V; V0L = 10% VDD or VCC; V0H = 90% VDD or VCC Input high (VIH) voltage range 1/ - - - - - - 3.5-5.0 V dc @ VCC or VDD = 5 V; 8.0-10.0 V dc @ VCC or VDD = 10 V; 11.0-15.0 V dc @ VCC or VDD = 15 V; VOL = 10% VDD or VCC; VOH = 90% VDD or VCC Case operating temperature range - - - - - - −55°C to 125°C Load capacitance - - - - - - - - - - - - - - 50 pF maximum

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.

Document History

August 21, 2019
Microcircuits, Digital, CMOS, Buffer/Converter, True/Compliment Buffer, Monolithic Silicon
A description is not available for this item.
September 30, 2014
Microcircuits, Digital, CMOS, Buffer/Converter, True/Compliment Buffer, Monolithic Silicon
A description is not available for this item.
December 16, 2009
Microcircuits, Digital, CMOS, Buffer/Converter, True/Compliment Buffer, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness...
February 22, 2005
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness...
April 28, 1999
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
October 6, 1995
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
September 30, 1988
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
September 21, 1984
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/55
April 30, 1984
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are...
August 16, 1983
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
September 30, 1982
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
June 28, 1982
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
December 2, 1981
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
November 10, 1981
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
April 8, 1980
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
July 7, 1978
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
November 22, 1977
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
January 21, 1977
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
September 10, 1976
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
May 5, 1976
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
October 19, 1975
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
July 10, 1974
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.
April 12, 1973
MICROCIRCUITS, DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLIMENT BUFFER, MONOLITHIC SILICON
A description is not available for this item.

References

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