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DLA - SMD-5962-88636 REV A

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 1K X 8 REGISTERED PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 September 1993
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 7C235 1K × 8 CMOS registered PROM 40 ns 02 7C235 1K × 8 CMOS registered PROM 30 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090") flat package L D-9 (24-lead, 1.280" × .310" × .200") dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100") leadless chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC program voltage - - - - - - - - - - - - - - - - - +14.0 V dc Maximum power dissipation (PD) 1/ - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θJC)- - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH)- - - - - - - - - - - - - - - 2.0 V dc to VCC Input low voltage (VIL) - - - - - - - - - - - - - - - −0.5 V dc to +0.8 V dc Case operating temperature range (TC) - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 11, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
June 21, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 30, 2007
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 19, 1994
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-88636 REV A
September 21, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 22, 1988
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 1K X 8 REGISTERED PROM, MONOLITHIC SILICON
A description is not available for this item.
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