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DLA - SMD-5962-89523

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 23 August 1989
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Shift in/out rate 01 (See 6.7) 64 × 4 CMOS parallel FIFO 10 MHz 02 (See 6.7) 64 × 4 CMOS parallel FIFO 15 MHz 03 (See 6.7) 64 × 4 CMOS parallel FIFO 25 MHz 04 (See 6.7) 64 × 4 CMOS parallel FIFO 35 MHz

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2(16-lead, .840" × .310" × .200"), dual-in-line package 2 C-2(20-terminal, .350" × .350" × .100"), square chip carrier package

Terminal voltage with respect to ground- - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - - - - - - 50 mA Storage temperature range- - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/- - - - - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases E and 2 - - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage (GND) - - - - - - - - - - - - - - - - - - - - - 0 V Input high voltage (VIH) - - - - - - - - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - - - - - - - - 0.8 V dc maximum 2/ Case operating temperature range (TC)- - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 23, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
May 1, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
November 9, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 27, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 5, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.
April 29, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-89523
August 23, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64 X 4 PARALLEL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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