DLA - SMD-5962-96645 REV A
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 16 January 1998 |
| Status: | inactive |
| Page Count: | 26 |
intended Use:
Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original... View More
Document History
April 15, 2005
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-96645 REV A
January 16, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER, MONOLITHIC SILICON
Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original...
January 17, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...