NPFC - MIL-S-19500/598
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 11 December 1991 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This specification covers the detail requirements for quad N-channel and P-channel, enhancementmode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
See figure I (MOQ3-6AB).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum...
October 18, 2018
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
February 26, 2015
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
May 8, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
January 28, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
July 14, 2011
Semiconductor Device, Quad, Field Effect Transistor, P-Channel, and N-Channel, Silicon Type 2N7336, JAN, JANTX, JANTXV, and JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type...
November 5, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type...
June 26, 2001
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 8, 1998
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
November 24, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor. Four levels of product assurance are provided for each device...
December 16, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 27, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/598
December 11, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for quad N-channel and P-channel, enhancementmode, MOSFET, power transistor intended for use in high density power switching applications. Three...