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DLA - SMD-5962-90644

MICROCIRCUIT, LINEAR, HIGH PERFORMANCE LOW-POWER FM IF SYSTEM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 24 November 1992
Status: inactive
Page Count: 15
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 605 High-performance low-power FM IF system

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CQCC2-N20 20 Square leedless chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without reference.

Power supply voltage (VCC) . . . . . . . . . . . . . . . . 9.0 V dc Storage temperature range . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA). . . . . . . 151°C/W (test ambient, still air) Junction temperature (TJ) . . . . . . . . . . . . . . . . 150°C Power dissipation (PD) . . . . . . . . . . . . . . . . . . 165 mW

Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . 6.0 V dc Ambient operating temperature range (TA) . . . . . . . . . −55°C to +125°C MIXER/OSC SECTION (external LO = 300 mV) Input signal frequency (fIN) . . . . . . . . . . . . . . 500 MHz typical Crystal oscillator frequency (fOSC). . . . . . . . . . . 150 MHz typical Third-order intercept point: f1 = 45.0 MHz; f2 = 45.06 MHz . . . . . . . . . . . . −10 dBm typical Conversion power gain, 50Ω source . . . . . . . . . . . −1.7 dB typical IF SECTION IF amp gain . . . . . . . . . . . . . . . . . . . . . . 39.7 dB typical Limiter gain . . . . . . . . . . . . . . . . . . . . . . 62.5 dB typical Input limiting −3 dB, R17 = 5.1 kOHgr;, test at IF AMP IN pin . . . . . . . . . . . . . . . . −113 dBm typical Unmuted audio level, R11 = 100 kΩ , 150 pF de-emphasis . 480 mV RMS typical SINAD sensitivity, RF level −118 dB. . . . . . . . . . . 16 dB typical Signal to noise ratio, no modulation for noise . . . . . 73 dB typical RSSI range, R9 = 100 kΩ, IF AMP OUT pin . . . . . . . . 90 dB typical RSSI accuracy, R9 = 100 kΩ, IF AMP OUT pin . . . . . . . ±1.5 dB typical Unmuted audio output impedance . . . . . . . . . . . . . 58 kΩ typical Muted audio output impedance . . . . . . . . . . . . . . 58 kΩ typical RF/IF SECTION (internal LO) Unmuted audio level, VCC = 4.5 V, RF level = −27 dBm . . 450 mV RMS typical System RSSI output, VCC = 4.5 V, RF level = −27 dBm . . 4.3 V typical

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

January 23, 1996
MICROCIRCUIT, LINEAR, HIGH PERFORMANCE LOW-POWER FM IF SYSTEM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90644
November 24, 1992
MICROCIRCUIT, LINEAR, HIGH PERFORMANCE LOW-POWER FM IF SYSTEM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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