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DLA - SMD-5962-89536 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 September 1993
Status: inactive
Page Count: 25
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.6) 1k × 9-bit parallel FIFO 120 ns 02 (see 6.6) 1k × 9-bit parallel FIFO 80 ns 03 (see 6.6) 1k × 9-bit parallel FIFO 65 ns 04 (see 6.6) 1k × 9-bit parallel FIFO 40 ns 05 (see 6.6) 1k × 9-bit parallel FIFO 30 ns 06 (see 6.6) 1k × 9-bit parallel FIFO 20 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line package Y GDIP1-T28 or GCIP2-T28 28 Dual-in-line package Z GDFP2-F28 28 Flat package, configuration 1 U CQCCl-N32 32 Rectangular leadless chip carrier package

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Terminal voltage with respect to ground . . . . . . . . . . −0.5 v dc to +7.0 V dc DC output current . . . . . . . . . . . . . . . . . . . . . 50 mA Storage temperature range . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . +260°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . +150°C 1/

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) . . . . . . . . . . . 2.2 V dc Maximum low lever input voltage (VIL) . . . . . . . . . . . +0.8 V dc 2/ Case operating temperature range (TC) . . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 23, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 26, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 6, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 17, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
November 4, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
May 10, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89536 REV B
September 17, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
October 25, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.
August 23, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON
A description is not available for this item.

References

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