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DLA - SMD-5962-88662 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 February 1993
Status: inactive
Page Count: 23
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 32K × 8 CMOS SRAM 100 ns 02 70 ns 03 55 ns 04 45 ns 05 35 ns 06 25 ns 07 20 ns 08 15 ns 09 12 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP3-F28 28 Flat pack U CQCC3-N28 28 Rectangular leadless chip carrier T CDFP4-F28 28 Flat pack N CDIP3-T28 or GDIP4-T28 28 Dual in-line M GDFP2-F28 28 Flat pack

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 2/ Input voltage range- - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc Ambient storage temperature- - - - - - - - - - - - - −65°C to +150°C Thermal resistance, junction-to-case (θJC) - - - - - See MIL-STD-1835 Junction temperature (TJ)- - - - - - - - - - - - - - +150°C 3/ Power dissipation- - - - - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc 2/ Ground voltage (VSS) - - - - - - - - - - - - - - - 0 V dc Input high voltage range (VIH) - - - - - - - - - - 2.2 V dc to VCC +0.5 V dc Input low voltage range (VIL)- - - - - - - - - - - −0.5 V dc to 0.8 V dc Operating case temperature (TC)- - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

November 1, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
January 8, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 14, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 SRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88662 REV B
February 17, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 26, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 SRAM, MONOLITHIC SILICON
A description is not available for this item.
July 27, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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