DLA - SMD-5962-82010 REV E
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 26 June 1996 |
| Status: | inactive |
| Page Count: | 23 |
Document History
October 26, 2017
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 x 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
November 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 x 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
March 2, 2005
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
December 22, 2000
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-82010 REV E
June 26, 1996
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
A description is not available for this item.