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DLA - SMD-5962-84071 REV E

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 November 1999
Status: inactive
Page Count: 14
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following examples.

For device classes M and Q:

For device class V:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC374 Three-state octal D-type flip-flop

The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device.

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC)...................................................... −0.5 V dc to +7.0 V dc DC input voltage range (VIN).................................................... −0.5 V dc to VCC +0.5 V dc DC output voltage range (VOUT).................................................. −0.5 V dc to VCC +0.5 V dc Clamp diode current (IIK)....................................................... ±20 mA DC output diode current (IOK) (per pin)......................................... ±35 mA DC VCC or GND current (per pin)................................................. ±70 mA Storage temperature range (TSTG)................................................ −65°C to + 150°C Maximum power dissipation (PD):................................................. 500 mW 4/ Lead temperature (soldering, 10 seconds)........................................ +260°C Thermal resistance, junction-to-case (θJC)................................. See MIL-STD-1835 Junction temperature (TJ)....................................................... +175°C 5/

Supply voltage range (VCC) ..................................................... +2.0 V dc to +6.0 V dc Case operating temperature range (TC) .......................................... −55°C to + 125°C Input rise or fall time tr, tf): VCC = 2.0 V ............................................................... 0 to 1,000 ns VCC = 4.5 V ............................................................... 0 to 500 ns VCC = 6.0 V ............................................................... 0 to 400 ns Minimum setup time (ts): TC = +25°C: VCC = 2.0 V................................................................. 100 ns VCC = 4.5 V................................................................. 20 ns VCC = 6.0 V................................................................. 17 ns TC = −55°C to + 125°C: VCC = 2.0 V................................................................. 150 ns VCC = 4.5 V................................................................. 30 ns VCC = 6.0 V................................................................. 25 ns

Minimum pulse width (tw): TC = +25°C: VCC = 2.0 V ............................................................... 80 ns VCC = 4.5 V ............................................................... 16 ns VCC = 6.0 V ............................................................... 14 ns TC = −55°C to + 125°C: VCC = 2.0 V ............................................................... 120 ns VCC = 4.5 V ............................................................... 24 ns VCC = 6.0 V ............................................................... 20 ns Minimum hold time (th): TC = +25°C: VCC = 2.0 V ............................................................... 10 ns VCC = 4.5 V ............................................................... 5 ns VCC = 6.0 V ............................................................... 5 ns TC = −55°C to + 125°C: VCC = 2.0 V ............................................................... 13 ns VCC = 4.5 V ............................................................... 5 ns VCC = 6.0 V ............................................................... 5 ns Maximum clock frequency (fmax): TC = +25°C: VCC = 2.0 V ............................................................... 6 MHz VCC = 4.5 V ............................................................... 30 MHz VCC = 6.0 V ............................................................... 35 MHz TC = −55°C to + 125°C: VCC = 2.0 V ............................................................... 4 MHz VCC = 4.5 V ............................................................... 20 MHz VCC = 6.0 V ............................................................... 24 MHz

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 18, 2021
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
September 23, 2015
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 21, 2009
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 14, 2002
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-84071 REV E
November 9, 1999
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 8, 1992
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 21, 1989
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
A description is not available for this item.
November 24, 1987
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
A description is not available for this item.
December 30, 1985
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
A description is not available for this item.
September 28, 1984
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
A description is not available for this item.
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