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DLA - SMD-5962-89696 REV B

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 December 1991
Status: inactive
Page Count: 22
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 64K × 1-bit, static ram 25 ns 02 25 ns (data retention) 03 20 ns 04 20 ns (data retention) 05 15 ns 06 15 ns (data retention)

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X Figure 1 (22-lead, 1.260" × .310" × .200"), dual-in-line package Z Figure 2 (22-terminal, .496" × .305" × .120") leadless chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - 50 mA Output voltage applied - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Ambient storage temperature- - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - −55°C to +125°C Thermal resistance, junction-to-case (θJC): Case X - - - - - - - - - - - - - - - - - - - - - - +15°C/W 2/ Case Z - - - - - - - - - - - - - - - - - - - - - - +60°C/W 2/ Power dissipation, (PD)- - - - - - - - - - - - - - - 1.0 W Junction temperature (TJ)- - - - - - - - - - - - - - +150°C Input voltage range- - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Lead temperature (soldering, 5 seconds)- - - - - - - +270°C

Supply voltage (VCC)- - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (VSS)- - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH)- - - - - - - - - - - - - - - +2.2 V dc to VCC +0.5 V dc Input low voltage (VIL)- - - - - - - - - - - - - - - −0.5 V dc to 0.8 V dc Operating case temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 14, 2023
MICROCIRCUIT, MEMORY DIGITAL, CMOS 64K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 15, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 21, 1998
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89696 REV B
December 2, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 19, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
A description is not available for this item.
January 18, 1990
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 1 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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