NPFC - MIL-M-38510/152
MICROCIRCUITS, DIGITAL, TTL, DATA DECODERS/DEMULTIPLEXERS, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 21 July 1986 |
| Status: | inactive |
| Page Count: | 46 |
scope:
This specification covers the detail requirements for monolithic silicon, TTL, data decoders/demultiplex
The part number shall be in accordance with MIL-M-38510, with the exception that the "JAN" or "J" certification shall not be used.
The device types shall be as shown in the following:
Device type Circuit
01 4-line to 16-line decoder/demultiplexe
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (l4-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package E D-2 (16-lead, ¼" × ⅞"), dual-in-line package F F-5 (16-lead, ¼" × ⅜"), flat package J D-3 (24-lead, ½" × 1¼"), dual-in-line package K F-6 (24-lead, ⅜" × ⅝ flat package Z F-8 (24-lead, ¼" × ⅜"), flat package
Supply voltage range - - - - - - - - - - - −0.5 V dc to 7.0 V dc Input voltage range - - - - - - - - - - - - −1.5 V dc at −12 mA to 5.5 V dc Storage temperature range - - - - - - - - - −65°C to +150°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Maximum power dissipation per gate (PD) 1/: Device type 01 - - - - - - - - - - - - - - - - - - - - - - - - 270 mW Device type 02 - - - - - - - - - - - - - - - - - - - - - - - - 195 mW Device type 03 - - - - - - - - - - - - - - - - - - - - - - - - 195 mW Device type 04 - - - - - - - - - - - - - - - - - - - - - - - 140 mW Device type 05 - - - - - - - - - - - - - - - - - - - - - - - - 190 mW Device type 06 - - - - - - - - - - - - - - - - - - - - - - - - 190 mW Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases A, B, C, D, E, F, J, K and Z - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/ - - - - - - - - - - - - - - - - - - +175°C
Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - - - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - - - - - - - - - 0.8 V dc Normalized fanout (each output) 3/ At low logic level - - - - - - - - - - - - - - - - - - - - - - 10 maximum At high logic level 4/ - - - - - - - - - - - - - 20 maximum Case operating temperature range (TC) - - - - - - - - - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for logistic support of existing equipment.
Document History