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NPFC - MIL-M-38510/114

MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 9 November 1979
Status: inactive
Page Count: 28
scope:

This specification covers the detail requirements for monolithic silicon, BI-FET operational amplifiers. Three product assurance classes and a choice of case outline and lead finish are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The BI-FET operational amplifiers shall be internally compensated and shall be distinguished by the following circuit characteristics:

Device type Circuit 01 JFET Input, low power 02 JFET Input, wide band 03 JFET Input, wide band, undercompensated 04 JFET Input, low power, low offset 05 JFET Input, wide band, low offset 06 JFET Input, wide band, undercompensated, low offset

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter MIL-M-38510 appendix C case outline G A-1 (B-lead can) H F-4 (10-lead, ¼" × ¼" flat package) P D-4 (8-lead, ¼" × ⅜", dual-in-line)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RADC(RBRD), Griffis AFB NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document, or by letter.

Supply voltage range - - - - - - - - - - - - - - - ±22 V Input voltage range 1/ - - - - - - - - - - - - - - ±20 V Differential input voltage range - - - - - - - - - ±40 V Storage temperature range- - - - - - - - - - - - - −65°C to +150°C Output short-circuit duration- - - - - - - - - - - Unlimited 2/ Lead temperature (soldering, 60 sec.)- - - - - - - 300°C Junction temperature - - - - - - - - - - - - - - - TJ = 175°C 3/

Supply voltage range- - - - - - - - - - - - - - - - ±5 to ±20 Vdc Ambient temperature range - - - - - - - - - - - - - −55°C to +125°C

Maximum allowable Maximum Maximum Package Case outline power dissipation ΘJ-C ΘJ-A 8-lead can G 330 mW @ TA = +125°C 40°C/W 150°C/W 10-lead flat pack H 330 mW @ TA = +125°C 60°C/W 150°C/W 8-lead DIP P 400 mW @ TA = +125°C 35°C/W 120°C/W

intended Use:

Microcircuits conforming to this specification are intended, for use for Government microcircuit applications (original equipment) and logistic purposes.

Document History

Microcircuits, Linear, Bi-Fet Operational Amplifiers, Monolithic Silicon
A description is not available for this item.
January 12, 2018
Microcircuits, Linear, Bi-Fet Operational Amplifiers, Monolithic Silicon
A description is not available for this item.
April 3, 2013
Microcircuits, Linear, Bi-Fet Operational Amplifiers, Monolithic Silicon
A description is not available for this item.
July 1, 2008
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, BI-FET operational amplifier microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are...
August 20, 2003
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, BI-FET operational amplifier microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are...
March 23, 2001
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
July 13, 1995
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
August 30, 1983
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
May 10, 1982
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
August 3, 1981
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
November 12, 1980
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
June 2, 1980
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
March 11, 1980
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/114
November 9, 1979
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, BI-FET operational amplifiers. Three product assurance classes and a choice of case outline and lead finish are provided for...
April 25, 1979
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
A description is not available for this item.

References

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