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DLA - SMD-5962-89953

MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, DUAL 4-STAGE SHIFT REGISTER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 February 1993
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC4015 Dual 4-stage static shift register

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range (VIN) - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC input diode current (IIK, for VIN < −0.5 V or VIN > VCC + 0.5 V) - - ±20 mA DC output diode currant (IOK, for VOUT < −0.5 V or VOUT > VCC + 0.5 V) - ±20 mA DC output current, per output (IOUT) - - - - - - - - - - - - - - - - - - ±25 mA DC VCC or GND current (ICC, IGND) - - - - - - - - - - - - - - - - - - - ±50 mA Storage temperature range (TSTG) - - - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - - - - - - - - - 500 mW 3/ Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - - - - +265°C Thermal resistance, junction-to-case (ΘJC) - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - - - - - 175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - +2 V dc to +6 V dc Case operating temperature range (TC) - - - - - - - - - - - - - - −55°C to +125°C Input voltage range (VIN) - - - - - - - - - - - - - - - - - - - - +0.0 V dc to VCC Output voltage range (VOUT) - - - - - - - - - - - - - - - - - - - +0.0 V dc to VCC Maximum low level input voltage (VIL): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 V dc VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 1.35 V dc VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 1.8 V dc Minimum high level input voltage (VIH): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 1.5 V dc VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 3.15 V dc VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 4.2 V dc Input rise and fall rate (tr, tf) maximum: VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 1000 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 500 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 400 ns Maximum clock frequency (fmax): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 4 MHz VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 20 MHz VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 24 MHz Minimum clock pulse width (tw): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 120 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 24 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 20 ns Minimum MR pulse width (tw): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 225 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 45 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 38 ns Minimum MR recovery time (trec): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 75 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 15 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 13 ns Minimum setup time, data in to CP (tsul, tsuh): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 90 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - 18 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - 15 ns Minimum hold time, data in to CP (th) - - - - - - - - - - - - - - 0 ns Maximum high level output current (IOH) - - - - - - - - - - - - - −5.2 mA Maximum low level output current (IOL) - - - - - - - - - - - - - - +5.2 mA

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD 5962-89953
May 22, 2020
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, DUAL 4-STAGE SHIFT REGISTER, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
SMD 5962-89953
April 25, 2013
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, DUAL 4-STAGE SHIFT REGISTER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89953 REV A
November 21, 2006
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, DUAL 4-STAGE SHIFT REGISTER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89953
February 1, 1993
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, DUAL 4-STAGE SHIFT REGISTER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

This document references:
MIL-STD-1835 - Electronic Component Case Outlines
Published by NPFC on September 21, 2009
This standard establishes and maintains a compilation of electronic component case outlines and should be useful to all levels of manufacturing that culminate in the production of reliable and...
This document references:
MIL-BUL-103AC CANC NOTICE 1 - LIST OF STANDARD MICROCIRCUIT DRAWINGS
Published by DLA on December 22, 1995
A description is not available for this item.
This document references:
MIL-M-38510 - MICROCIRCUITS, GENERAL SPECIFICATION FOR
Published by NPFC on August 27, 1993
A description is not available for this item.
This document references:
MIL-STD-883 - TEST METHOD STANDARD MICROCIRCUITS
Published by NPFC on September 16, 2019
Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic...
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