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DLA - SMD-5962-96566

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 February 1996
Status: inactive
Page Count: 17
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ACS193 Radiation hardened, CMOS, synchronous 4-bit up/down dual clock counter

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VDD): . . . . . . . . . . . . . . . . . . . . . . −0.3 V dc to +7.0 V dc DC input voltage range (VI/O): . . . . . . . . . . . . . . . . . . . . . −0.3 V dc to VDD +0.3 V dc DC input current, any one input (IIN) . . . . . . . . . . . . . . . . . ±10 mA Latch-up immunity current (ILU) . . . . . . . . . . . . . . . . . . . . ±150 mA Storage temperature rang (TSTG) . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 5 seconds) . . . . . . . . . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . +175°C Maximum package power dissipation (PD) . . . . . . . . . . . . . . . . . 1.0 W

Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . . . . . . . . . . . . . . . . . . . . . . . +0.0 V dc to VDD Output voltage range (VOUT) . . . . . . . . . . . . . . . . . . . . . . +0.0 V dc to VDD Maximum low level input voltage (VIL) . . . . . . . . . . . . . . . . . 0.3VDD Maximum Minimum high level input voltage (VIH) . . . . . . . . . . . . . . . . . 0.7VDD Minimum Case operating temperature range (TC) . . . . . . . . . . . . . . . . . −55°C to +125°C Maximum input rise and fall time at VDD = 4.5 V (tr, tf) . . . . . . . . 1 ns/V 4/

Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 1 × 106 Rads (SI) Single event phenomenon (SEP) effective linear energy threshold (LET) No upsets (see 4.4.4.4) . . . . . . . . > 80 MeV/(mg/cm2) Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . . . > 1 × 109 Rads (SI)/s Latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . None Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . . . > 1 × 1012 Rads (SI)/s

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

October 25, 2017
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
May 10, 2012
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 15, 2010
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 7, 2008
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK OUNTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 5, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK OUNTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 27, 2007
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 21, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
A description is not available for this item.
December 3, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
A description is not available for this item.
November 21, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-96566
February 2, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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