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NPFC - MIL-M-38510/348

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 12 May 1988
Status: inactive
Page Count: 43
scope:

This specification covers the detail requirements for monolithic silicon, advanced schottky TTL, bus transceivers, with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Quad inverting bus transceivers, with three-state outputs 02 Quad noninverting bus transceivers, with three-state outputs 03 Octal noninverting bus transceivers, with three-state outputs 04 Octal noninverting bus transceivers, with three-state outputs

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, .280" × .260" × .085"), flat package B F-3 (14-lead, .280" × .200" × .070"), flat package C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package R D-8 (20-lead, 1.060" × .310" × .200"), dual-in-line package S F-9 (20-lead, .540" × .300" × .100"), f),at package X C-2A (20-terminal, .358" × .358" × .075'), square chip carrier package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, AFSC, RADC/RBE-2, Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range- - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - −1.2 V dc at −18 mA to +7.0 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device type 01- - - - - - - - - - - - - - 495 mW Device type 02- - - - - - - - - - - - - - 506 mW Device types 03 and 04- - - - - - - - - - 786.5 mW Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, Junction-to-case (θJC): Cases A, B, C, D, R, S, X, and 2- - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/- - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high-level input voltage (VIH) - 2.0 V Maximum low-level input voltage (VIL)- - 0.8 V Normalized fanout (each output): Low-logic level- - - - - - - - - - - - 33 maximum High-logic level - - - - - - - - - - - 50 maximum Case operating temperature range (TC)- - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
September 20, 2018
Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
February 26, 2009
Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
February 26, 2009
Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL, bus transceivers, with three state outputs. Two product assurance classes and a choice of case...
May 6, 2004
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL, bus transceivers, with three state outputs. Two product assurance classes and a choice of case...
July 12, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
August 23, 1993
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
October 27, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/348
May 12, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, advanced schottky TTL, bus transceivers, with three-state outputs. Two product assurance classes and a choice of case...
November 10, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
June 23, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
May 9, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 27, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 21, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.

References

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