NPFC - MIL-M-38510/348
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 12 May 1988 |
| Status: | inactive |
| Page Count: | 43 |
scope:
This specification covers the detail requirements for monolithic silicon, advanced schottky TTL, bus transceivers, with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510, and as specified herein.
The device types shall be as follows:
Device type Circuit 01 Quad inverting bus transceivers, with three-state outputs 02 Quad noninverting bus transceivers, with three-state outputs 03 Octal noninverting bus transceivers, with three-state outputs 04 Octal noninverting bus transceivers, with three-state outputs
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, .280" × .260" × .085"), flat package B F-3 (14-lead, .280" × .200" × .070"), flat package C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package R D-8 (20-lead, 1.060" × .310" × .200"), dual-in-line package S F-9 (20-lead, .540" × .300" × .100"), f),at package X C-2A (20-terminal, .358" × .358" × .075'), square chip carrier package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, AFSC, RADC/RBE-2, Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage range- - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - −1.2 V dc at −18 mA to +7.0 V dc Storage temperature range - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device type 01- - - - - - - - - - - - - - 495 mW Device type 02- - - - - - - - - - - - - - 506 mW Device types 03 and 04- - - - - - - - - - 786.5 mW Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, Junction-to-case (θJC): Cases A, B, C, D, R, S, X, and 2- - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/- - - - - - - +175°C
Supply voltage (VCC) - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high-level input voltage (VIH) - 2.0 V Maximum low-level input voltage (VIL)- - 0.8 V Normalized fanout (each output): Low-logic level- - - - - - - - - - - - 33 maximum High-logic level - - - - - - - - - - - 50 maximum Case operating temperature range (TC)- - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.
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