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NPFC - MIL-M-38510/656

MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 31 March 1986
Status: inactive
Page Count: 61
scope:

This specification covers the detail requirements for monolithic silicon, high speed, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuits 01 Octal D - Flip-Flop with Clear 02 Octal Three-State D Flip-Flop 03 Octal D - Flip-Flop with Enable 04 Octal Three-State D Flip-Flop 05 Octal Three-State D Flip-Flop w/inverting outputs 06 Octal Three-State D Flip-Flop w/inverting outputs 52 Octal Three-State D Flip-Flop (LS-TTL input)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) R D-8 (20-lead, ¼" × 1-1/6"), dual-in-line package 2 C-2 (20-terminal, .350" × .350") square chip carrier package

Supply voltage (VCC) - - - - - - - - - - - - −0.5 V dc +7.0 V dc DC input voltage (VIN) - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage (VOUT) - - - - - - - - - - −0.5 V dc to VCC +0.5, V dc Clamp diode current (IIK, IOK) - - - - - - - ±20 mA DC output current per pin (IOUT) - - - - - - ±25 mA DC VCC or GND current per pin (IOC)- - - - - ±50 mA Storage temperature range (TSTG) - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - 300 mW (02, 04-06, 52, 420 mW) Lead temperature (soldering, 10 seconds) - - +300°C Thermal resistance, junction-to-case (θJC): Case R - - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2 - - - - - - - - - - - - - - - - - - 60°C/W Junction temperature (TJ) - - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed )Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Device types 01, 02, 03, 04, 05, 06: Input low (VIL) maximum voltage - - - - 0.3 V at VCC = 2 V 0.9 V at VCC = 4.5 V 1.2 V at VCC = 6 V Input high (VIH) minimum voltage- - - - 1.5 V at VCC = 3 V 3.15 V at VCC = 4.5 V 4.2 V at VCC = 6 V Device types 01, 02, 03, 04, 05, 06: Supply voltage (VCC) - - - - - - - - - - 2 V dc minimum to 6 V dc maximum Output voltage - - - - - - - - - - - - - 0 V dc to VCC. Operating temperature - - - - - - - - - −55°C to +125°C Input rise and fall times (tr, tf) maximum: VCC = 2 V 1000 ns YCC = 4.5 V 500 ns VCC = 6 V 400 ns Device type 52: Input low (VIL) maximum voltage - - - - 0.8 at VCC = 4.5 to 5.5 Input high (VIH) minimum voltage - - - 2.0 V at VCC = 4.5 - 5.5 Supply voltage (VCC) - - - - - - - - - 4.5 V to 5.5 V dc Output voltage- - - - - - - - - - - - - 0 V dc to 5.5 V dc Operating temperature - - - - - - - - - −55°C to +125°C Input rise and fall times (tr, tf): VCC = 4.8 V 500 ns Setup time before clock (tsu) 20 ns minimum. Hold time (tH): Device types 01, 03, 04, 06 - - - - - 5 ns minimum Device types 02, 05, 52 - - - - - - - 10 ns minimum Clock pulse (tCLK): Device types 02, 04, 05, 06 - - - - - 16 ns minimum Device type 01 - - - - - - - - - - - 18 ns minimum Device types 03, 52 - - - - - - - - - 20 ns minimum (tREM): Device type 01 - - - - - - - - - - - 20 ns minimum

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.

Document History

February 19, 2020
Microcircuits, Digital, High-Speed CMOS, Flip-Flops, Monolithic Silicon
A description is not available for this item.
May 7, 2015
Microcircuits, Digital, High-Speed CMOS, Flip-Flops, Monolithic Silicon
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August 3, 2010
Microcircuits, Digital, High-Speed CMOS, Flip-Flops, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
October 12, 2005
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...
May 23, 2000
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON
A description is not available for this item.
August 9, 1996
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A description is not available for this item.
March 31, 1992
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON
A description is not available for this item.
November 9, 1987
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/656
March 31, 1986
MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, FLIP-FLOPS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, high speed, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are...

References

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