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DLA - SMD-5962-98639

MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 8 October 1998
Status: inactive
Page Count: 13
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 OP07A Radiation hardened, single ultra low offset operational amplifier

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-10 or CDFP2-F10 10 Flat pack P P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carder

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VS) ±22.0 V dc Input voltage (VIN) ±22.0 V dc 2/ Differential input voltage ±30 V dc Internal power dissipation (PD) 500 mW Output short circuit duration Indefinite Lead temperature (soldering, 10 seconds) +300°C Junction temperature (TJ) +150°C Storage temperature range −65°C to +150°C Thermal resistance, junction-to-case (θJC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (θJA): Cases G and H +150°C/W Case P +119°C/W Case 2 +110°C/W

Supply voltage range (VS) ±4.5 V dc to ±20 V dc Ambient operating temperature range (TA) −55°C to +125°C

Total dose ≤ 100 krads

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 9, 2019
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
March 28, 2011
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 12, 2007
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 28, 2005
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 20, 2003
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
July 30, 1999
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-98639
October 8, 1998
MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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