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DLA - SMD-5962-76004 REV F

MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 24 March 1995
Status: inactive
Page Count: 9
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54LS132 quadruple, 2-input Schmitt-Trigger positive NAND gates

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 dual-in-line package D GDFP1-F14 or CDFP2-F14 14 flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - - - - −0.5 V dc to 7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to 5.5 V dc Storage temperature range - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/- - - - - - - - - - - - - 77 mW Lead temperature (soldering, 10 seconds) - - - - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC) - - - - - - - - (See MIL-STD-1835) Junction temperature (TJ) - - - - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - - - - 1.9 V dc Maximum low level input voltage (VIL)- - - - - - - - - - - 0.5 V dc Case operating temperature range (TC)- - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 21, 2020
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
March 25, 2015
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 15, 2005
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 19, 2002
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-76004 REV F
March 24, 1995
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY TTL, POSITIVE NAND GATES, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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