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DLA - SMD-5962-87615 REV B

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 2 October 1989
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC08 Quad two-input AND gate 02 54AC11008 Quad two-input AND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual in line package D F-2 (14-lead, .390" × .260" × .085"), flat package E D-2 (16-lead, .840" × .310" × .200"), dual in line package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range 1/ - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC input voltage range 1/- - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage range 1/ - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin)- - - - - - - - - - - - - - ±50 mA DC VCC or GND current - - - - - - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - - −65° C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - - +260°C Thermal resistance, junction-to-case (θJC) - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) 3/- - - - - - - - - - - - +3.0 V dc to +5.5 V dc Input voltage range - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - - −55°C to +125° C Input rise of fall times range: VCC = 3.6 V, 5.5 V - - - - - - - - - - - - - - - - 0 to 8 ns/V

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 27, 2023
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
A description is not available for this item.
March 27, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
March 20, 2014
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 8, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 9, 2003
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 1, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-87615 REV B
October 2, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 18, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
A description is not available for this item.
May 27, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON
A description is not available for this item.

References

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