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DLA - SMD-5962-96542

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 31 May 1996
Status: inactive
Page Count: 14
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator.Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54ACS132 Radiation hardened, quadruple 2-input NAND Schmitt trigger

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and Qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . −0.3 V dc to +7.0 V dc DC input voltage range (VIN) . . . . . . . . . . . . . . . . . . . −0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . . . . . . . . . . . . . . . . . . −0.3 V dc to VDD + 0.3 V dc DC input current, any one input (IIN) . . . . . . . . . . . . . . . ±10 mA Latch-up immunity current (ILU) . . . . . . . . . . . . . . . . . . ±150 mA Storage temperature range (TSTG) . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 5 seconds) . . . . . . . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . . See MIL-STD-1835 Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . +175°C Maximum package power dissipation (PD)) . . . . . . . . . . . . . . 1.0 W

Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . . . . . . . . . . . . . . . . . . . . . +0.0 V dc to VDD Output voltage range (VOUT) . . . . . . . . . . . . . . . . . . . . +0.0 V dc to VDD Case operating temperature range (TC) . . . . . . . . . . . . . . . −55°C to +125°C Maximum input rise and fall time at VDD = 4.5 V (tr, tf) . . . . . 1 ns/V 4/

Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 1 × 106 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) No upsets (see 4.4.4.4) . . . . . . > 80 MeV/(mg/cm2) Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . > 1 × 109 Rads (Si)/s Latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . None Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . > 1 × 1012 Rads (Si)/s

The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solitation.

SPECIFICATION MILITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines.

HANDBOOKS MILITARY MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's). MIL-HDBK-780 - Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, bulletin, and handbook are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

October 27, 2017
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
August 20, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 9, 2012
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 22, 2011
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 9, 2009
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
August 12, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
November 20, 2003
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
January 31, 2002
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
October 2, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
April 22, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-96542
May 31, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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