CEI EN 62047-16
Semiconductor devices - Micro-electromechanical devices Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
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| Organization: | CEI |
| Publication Date: | 1 January 2016 |
| Status: | active |
| Page Count: | 18 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young's modulus and Poisson's ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.
Document History
CEI EN 62047-16
January 1, 2016
Semiconductor devices - Micro-electromechanical devices Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or...