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MIL-PRF-19500/646 - SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
February 15, 2019 - NPFC

This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/649 - SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY TYPE 1N6781, JAN, JANTX, JANTXV, AND JANS
February 14, 2019 - NPFC

This specification covers the performance requirements for silicon, Schottky power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500

UL 2749 OUTLINE - OUTLINE OF INVESTIGATION FOR SEASONAL USE LED DRIVERS AND NON-INTEGRAL LED LIGHTING STRINGS
March 4, 2019 - UL

This outline covers the requirements for drivers for use with light-emitting-diode (LED) decorative lighting applications and non-integral light-emitting-diode lighting strings. A non-integral lighting string is an LED lighting string that is provided with one or more fittings that...

MIL-PRF-19500/158 - SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1 THROUGH 1N3157-1 LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
January 18, 2019 - NPFC

This specification covers the performance requirements for 8.4 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven...

MIL-PRF-19500/157 - SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, AND 1N946B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
January 17, 2019 - NPFC

This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven...

MIL-PRF-19500/156 - SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
January 16, 2019 - NPFC

This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in...

MIL-PRF-19500/286 - SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N4245 THROUGH 1N4249, JAN, JANTX, JANTXV, AND JANHC
November 8, 2018 - NPFC

This specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/548 - COUPLER, OPTOELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, THROUGH HOLE AND SURFACE MOUNT, TYPES 4N47, 4N48, AND 4N49, QUALITY LEVELS: JAN, JANTX, JANTXV, AND JANS
February 15, 2019 - NPFC

This specification covers the performance requirements for solid state optically coupled isolators in which a gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...

MIL-PRF-19500/159 - SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY)
January 19, 2019 - NPFC

This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two...

MIL-PRF-19500/608 - SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE, DOUBLER, TYPE 1N6660, CASE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
November 7, 2018 - NPFC

This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/585 - DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES, 1N6620 THROUGH 1N6625, JAN, JANTX, JANTXV, AND JANS
November 5, 2018 - NPFC

This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

ISO FDIS 21264 - Surface active agents - Detergents - Determination of alkylphenol ethoxylates
December 21, 2018 - ISO

This document provides a method for the determination of alkylphenol ethoxylates (APEOs) in surfactants using high performance liquid chromatography (HPLC) and detected with diode array detector (DAD) or fluorescence detector (FLD). This method is appropriate for the detection and...

MIL-PRF-19500/427 - SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
October 18, 2018 - NPFC

This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance...

MIL-PRF-19500/429 - SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
October 22, 2018 - NPFC

This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels...

IEC 60825-12 - Safety of laser products – Part 12: Safety of free space optical communication systems used for transmission of information
February 1, 2019 - IEC

This part of IEC 60825 provides requirements and specific guidance for the manufacture and safe use of laser products and systems used for point-to-point or point-to-multipoint free space optical data transmission in the wavelength range from 180 nm to 1 mm. This document only addresses the open...

IEC 60825-12 REDLINE - Safety of laser products – Part 12: Safety of free space optical communication systems used for transmission of information
February 1, 2019 - IEC

This part of IEC 60825 provides requirements and specific guidance for the manufacture and safe use of laser products and systems used for point-to-point or point-to-multipoint free space optical data transmission in the wavelength range from 180 nm to 1 mm. This document only addresses the open...

DS/IEC TR 62977-2-4 - Electronic displays – Part 2-4: Transparent displays – Overview of application scenarios
November 19, 2018 - DS

IEC TR 62977-2-4:2018(E) provides a comprehensive overview of application scenarios for transparent displays of the two major display technologies (liquid crystal (LC) and organic light emitting diode (OLED) displays) and introduces the observation and illumination aspects that are taken...

DS/IEC TR 62977-2-5 - Electronic displays devices – Part 2-5: Transparent displays – Measurements of optical characteristics
November 19, 2018 - DS

IEC TR 62977-2-5:2018(E) describes the conditions and measuring methods for determining the displayed properties (on-screen) and the through-screen properties of transparent direct­view­type liquid crystal displays (LCDs) and those of organic light emitting diode (OLED) displays.

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