Etcher ASTM Standards

This test method covers an accelerated exposure test intended to simulate defects in automotive clearcoats caused by acid rain2 that occur at the Jacksonville, Florida exposure site. Exterior exposures at an acid rain test location in Jacksonville, Florida produce etch defects that range...

This test method covers an accelerated exposure test intended to simulate defects in automotive clearcoats caused by acid rain2 that occur at the Jacksonville, Florida exposure site. Exterior exposures at an acid rain test location in Jacksonville, Florida produce etch defects that range...

5.1 Acid etch damage is an important warranty claim item for automotive companies. As a result, acid etch resistance is an important parameter for automotive exterior coatings. The method described in this test method has been shown to simulate acid etch damage of automotive...

5.1 Acid etch damage is an important warranty claim item for automotive companies. As a result, acid etch resistance is an important parameter for automotive exterior coatings. The method described in this test method has been shown to simulate acid etch damage of automotive...

Acid etch damage is an important warranty claim item for automotive companies. As a result, acid etch resistance is an important parameter for automotive exterior coatings. The method described in this test method has been shown to simulate acid etch damage of automotive...

This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F 47....

This specification covers the standard practices for detecting susceptibility to intergranular attack in austenitic stainless steels. These practices include five intergranular corrosion tests, namely: (1) oxalic acid etch test for classification of etch structures of austenitic...

These practices cover the following five tests: Practice A-Oxalic Acid Etch Test for Classification of Etch Structures of Austenitic Stainless Steels (Sections 4 to 13, inclusive), Practice B-Ferric Sulfate-Sulfuric Acid Test for Detecting Susceptibility to Intergranular Attack in...

The procedure used for etching the copper foil from the base insulating materials may significantly affect the results of electrical tests. This is true primarily for two reasons. First, the geometry of the copper which remains and forms the electrodes is in part determined by the etching...

1. Scope 1.1 This test method covers detection of crystalline defects in the surface region of silicon wafers which are induced or enhanced by oxidation cycles encountered in device processing. Atmospheric pressure oxidation cycles representative of bipolar, MOS, and CMOS technologies are included....

This specification covers the standard practices for detecting susceptibility to intergranular attack in austenitic stainless steels. These practices include five intergranular corrosion tests, namely: (1) oxalic acid etch test for classification of etch structures of austenitic...

This specification covers the standard practices for detecting susceptibility to intergranular attack in austenitic stainless steels. These practices include five intergranular corrosion tests, namely: (1) oxalic acid etch test for classification of etch structures of austenitic...

This practice covers a procedure to determine the resistance of annealed architectural flat glass to thermally induced stresses caused by exposure to sun and shadows for a specified probability of breakage (Pb). Proper use of this procedure is intended to reduce the possibility of thermal breakage...

This practice is used to detect shallow etch pits, which may be related to the level of metallic impurities near the surface of silicon epitaxial or polished wafers. This practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect...

This practice covers the detection of crystalline defects in the surface region of silicon wafers. The defects are induced or enhanced by oxidation cycles encountered in normal device processing. An atmospheric pressure, oxidation cycle representative of bipolar, metal-oxide-silicon (MOS) and CMOS...

1. Scope 1.1 This test method covers the determination of thickness of silicon heteroepitaxial or polysilicon layers deposited under conditions such that the interface region between the deposited layer and the substrate is less than 20-nm thick. Interface regions 20 nm and thicker rarely occur,...

4.1 These test methods describe laboratory tests to determine the presence of mu-phase in Wrought Nickel-Rich, Chromium, and Molybdenum-Bearing Alloys through comparison of microstructure observed for etched metallographic specimens to a glossary of photomicrographs displaying the presence...

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F...

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method...

4.1 These test methods describe laboratory tests to determine the presence of mu-phase in Wrought Nickel-Rich, Chromium, and Molybdenum-Bearing Alloys through comparison of microstructure observed for etched metallographic specimens to a glossary of photomicrographs displaying the presence...