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CRC - NE11338 - HIGH RESOLUTION IMAGING : DETECTORS AND APPLICATIONS Organization: CRC
Date: 2015-01-28
Description: The present-day technology has made it possible to develop large-format complementary metal oxide–semiconductor (CMOS) and charge-coupled device (CCD) array mosaics, orthogonal transfer CCDs, electron-multiplication CCDs, electron-avalanche photodiode arrays, and quantum-well infrared (IR) photon detectors. The requirements to develop artifact-free photon shot noise-limited images are higher sensitivity and quantum efficiency, reduced noise that includes dark current, read-out and amplifier noise, smaller point-spread functions, and higher spectral bandwidth.
WILEY - MERCURY CADMIUM TELLURIDE - MERCURY CADMIUM TELLURIDE: GROWTH PROPERTIES AND APPLICATIONS COMPLETE DOCUMENT Organization: WILEY
Date: 2010-01-01
Description: Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors

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