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Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions...
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy...
Scope. This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices provides a concise, complete introduction to the fundamental principles of electronic conduction in microelectronic and nanoelectronic devices, with an emphasis on integrating the quantum aspects of conduction. The...
Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance (JANHC and...
Scope. This specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance...
Scope. This specification covers the performance requirements for PNP silicon, high-power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided as specified in MIL-PRF-19500.
This instruction applies to all persons maintaining LCD, LED and TFT Customer Information System displays used by Network Rail and/or the SFO. Purpose This instruction defines the telecommunications maintenance procedure for Liquid Crystal Display (LCD), Light Emitting Diode (LED) and Thin Film...
Scope. This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular...
Scope. This specification covers the performance requirements for NPN, silicon, amplifier transistor. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device as specified in MIL-PRF-19500 and one level of product assurance are provided for unencapsulated...
Scope. This specification covers the performance requirements for NPN silicon, power darlington transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for NPN, silicon, transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Scope. This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in particular powerswitching applications. Two levels of product assurance (JANTXV and JANS) are...
This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.
Scope. This specification covers the performance requirements for N and P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor die. Two levels of product assurance (JANHC and JANKC) are provided for each device type as specified in MIL-PRF-19500.
This introductory text develops the reader's fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots,...
Scope. This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance (JAN) is provided for each device type.
Scope. This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
