IEC 62373-1
Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET
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| Organization: | IEC |
| Publication Date: | 1 July 2020 |
| Status: | active |
| Page Count: | 48 |
| ICS Code (Transistors): | 31.080.30 |
scope:
This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
Document History
IEC 62373-1
July 1, 2020
Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET
This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This...