NPFC - MIL-PRF-19500/605
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 12 August 2016 |
| Status: | active |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device. Provisions for radiation hardness assurance (RHA) to four radiation levels ("M", "D", "R" and "H") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 31, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
A description is not available for this item.
MIL-PRF-19500/605
August 12, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 20, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
April 16, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
September 4, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
December 17, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
March 24, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
November 10, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching...