DOD - SMD 5962-07235
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 16-BIT (2M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 4 November 2016 |
| Status: | active |
| Page Count: | 23 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
Document History
December 15, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 16-BIT (2M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-07235
November 4, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 16-BIT (2M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
January 27, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 16-BIT (2M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...