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DOD - SMD 5962-87592

MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 10 May 2017
Status: active
Page Count: 16
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

intended Use:

Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-87592
May 10, 2017
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
October 1, 2009
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
September 29, 2000
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
April 29, 1988
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 24, 1987
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

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