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DOD - SMD 5962-82010

MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 x 1 BIT DYNAMIC RAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 26 October 2017
Status: active
Page Count: 20
scope:

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

intended Use:

Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-82010
October 26, 2017
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 x 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
November 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 x 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
March 2, 2005
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
December 22, 2000
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
June 26, 1996
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

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