DOD - SMD 5962-08215
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 25 July 2018 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
March 1, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-08215
July 25, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
February 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
February 19, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 15, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
January 23, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
May 6, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 17, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 14, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...